Deposition of ALD-Molybdenum for Flash Memory Wordline Metallization

Multiple metallization applications in both memory and logic are transitioning to fluorine-free, barrierless ALD molybdenum. For the NAND Flash wordline application we have developed a proprietary ALD-Molybdenum (ALD-Mo) process that nucleates well on dielectrics (Al2O3), enabling low wordline resistance in geometrically constrained NAND Flash memory arrays.In this paper we demonstrate how chemistry and transport modeling can be used to guide NAND Flash wordline process optimization and to anticipate future requirements as NAND Flash devices transition from 300 to 1000 wordlines.