Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure

Electric field (E) control of the tunnel magnetoresistance (TMR) effect is a key technology for reducing power consumption during data writing in spintronic memory devices. In this Letter, we explore E control of the TMR effect in magnetic tunnel junction devices with a Co2FeSi/V/PMN-PT multiferroic heterostructure. By controlling the polarity of the applied E to the multiferroic heterostructure, a repeatable and nonvolatile change in the TMR effect is achieved. The change in the TMR effect is strongly influenced by the microscopic domain structures in the Co2FeSi layer after the application of a certain E. To obtain optimal changes, it is important to consider the control of the microscopic domain structure governed by the magnetoelectric effect in the multiferroic heterostructure.