P‐Type Silicon Solar Cells with Passivating Rear Contact Formed by LPCVD p+ Polysilicon and Screen Printed Ag Metallization

The work shows a process flow for the fabrication of bifacial 244 cm 2 large p‐type solar cells with a passivating rear contact formed by low pressure chemical vapor deposition of an in‐situ boron doped polysilicon layer. Contacting of both polarities is achieved by screen printing of a silver paste and contact firing. Contact resistance values are shown to heavily depend on firing set temperatures. In a first experiment, conversion efficiencies up to 20.4% are demonstrated.