凝聚态物理
物理
自旋电子学
拓扑绝缘体
量子霍尔效应
自旋(空气动力学)
量子自旋霍尔效应
自旋霍尔效应
半导体
自旋极化
电子
磁场
量子
量子反常霍尔效应
磁电阻
带隙
作者
Dongchao Wang,Li Chen,Changmin Shi,Xiaoli Wang,Guangliang Cui,Pinhua Zhang,Yeqing Chen
标识
DOI:10.1088/1367-2630/18/3/033026
摘要
Based on first-principles calculations, we propose one new category of two-dimensional topological insulators (2D TIs) in chemically functionalized (-CH3 and -OH) arsenene films. The results show that the surface decorated arsenene (AsCH3 and AsOH) films are intrinsic 2D TIs with sizeable bulk gap. The bulk energy gaps are 0.184 eV, and 0.304 eV in AsCH3 and AsOH films, respectively. Such large bulk gaps make them suitable to realize quantum spin Hall effect in an experimentally accessible temperature regime. Topologically helical edge states in these systems are desirable for dissipationless transport. Moreover, we find that the topological properties in these systems are robust against mechanical deformation by exerting biaxial strain. These novel 2D TIs with large bulk gaps are potential candidate in future electronic devices with ultralow dissipation.
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