Investigations on Resistive Switching Mechanisms of Fluorinated Ruddlesden–Popper Perovskite-Based Memristors for Nociceptor Application

记忆电阻器 材料科学 钙钛矿(结构) 整改 光电子学 相(物质) 电阻式触摸屏 电阻随机存取存储器 纳米技术 纵横比(航空) 电流(流体) 横杆开关 热传导 堆栈(抽象数据类型) 压电 电阻率和电导率 神经形态工程学 薄膜 导电体 想象 磁电机 热电效应 电压
作者
Mukesh Kumar Thakan,Manish Khemnani,Jeny Gosai,Ankur Solanki,Vipul Kheraj
出处
期刊:ACS Applied Materials & Interfaces [American Chemical Society]
卷期号:17 (41): 57343-57354 被引量:4
标识
DOI:10.1021/acsami.5c07947
摘要

Ruddlesden–Popper (RP) phase hybrid organic–inorganic perovskites have gained significant attention for various optoelectronic applications due to their exceptional properties and potential for high performance. In this study, we present a diffusive memristor using a (4F-PEAI)2(MA)n–1PbnI3n+1based RP perovskite thin film as the resistive switching medium and explore its optical, structural, and electrical characteristics. The current–voltage (I–V) behavior of the device (PET/ITO/PEDOT:PSS/RP/PMMA) shows a strong dependence on the stoichiometry, particularly the number of PbI6 octahedral layers (n) present between consecutive 4F-PEA layers. By varying the molar concentration of precursor solutions, we demonstrate that higher values of MA:Pb ratio in the precursor solutions lead to a mixed-phase material with the n = 1 phase dominating. The phase distribution within the RP film influences both the SET/RESET voltages and the ON/OFF current ratio in the I–V characteristics. An optimal combination of phases with both lower and higher values of n is identified, yielding a memristor with superior switching performance, achieving an current ON/OFF ratio of approximately 104 and a SET voltage of around 1.3 V. The integration of interface layers results in current rectification of approximately 103, which is crucial for crossbar systems where low sneak currents are essential. The I–V characteristics exhibit distinct conduction mechanisms in the various regimes. Additionally, the unipolar I–V behavior with a high ON/OFF ratio makes these diffusive memristors suitable for bioinspired applications. We demonstrate a bioinspired injury-response system combining a piezoelectric pressure sensor, a memristor-based nociceptor, and optical indicators that visually represent pain intensity, enabling damage detection, real-time communication, and responsive actions. This system holds potential for advancing human–robot interaction technologies.
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