Homoepitaxial growth of thick Si-doped β-Ga2O3 layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy

Abstract By using tetramethylsilane (TMSi) as a Si dopant source, thick intentionally Si-doped β-Ga 2 O 3 homoepitaxial layers were grown by low-pressure hot-wall metalorganic vapor phase epitaxy. The Si concentration was linearly controlled by varying the TMSi supply, and a RT electron density nearly equal to the Si concentration was achieved in the range from 1.8 × 10 16 to 1.3 × 10 19 cm –3 . For the layer with a Si concentration and RT electron density of 1.8 × 10 16 cm –3 , the RT electron mobility of 136 cm 2 V –1 s –1 was found to be limited by polar optical phonon scattering.