Engineering oxygen vacancy-induced interface trap memristive effect in selenium-implanted gallium oxide

In recent years, memristors have garnered significant attention, particularly those based on the oxygen vacancy-driven filamentary conduction mechanism. However, studies utilizing single-crystal materials for memristors remain scarce. This study investigates memristive effect of Se-implanted β-Ga2O3 single-crystal material, fabricated through ion implantation. X-ray photoelectron spectroscopy and depth profiling revealed that Se doping significantly increased the concentration of oxygen vacancies, crucial for resistive switching (RS). Electrical testing demonstrated stable and repeatable resistive switching behavior, attributed to the filamentary conduction mechanism driven by oxygen vacancies. These findings highlight the potential of ion implantation for tuning the surface properties of Ga2O3-based memristors, advancing their application in next-generation electronic devices.