2-mW-Output Power Uni-Traveling-Carrier Photodiodes in 300-GHz-Band

In this paper, we present a uni-traveling-carrier photodiode (UTC-PD) fabricated on a SiC substrate in order to increase saturated output power by improving the thermal management. The realized UTC-PD chip is implemented on an all-silicon waveguide platform and packaged. For a single photodiode, it is experimentally validated with record output power of over 2 mw in 300-GHz-band.