微电子
等离子体
薄脆饼
等离子体处理
感应耦合等离子体
蚀刻(微加工)
化学
反应离子刻蚀
等离子体刻蚀
产量(工程)
等离子体化学
纳米技术
化学物理
材料科学
分析化学(期刊)
冶金
环境化学
物理
量子力学
图层(电子)
作者
Dmitry Levko,Chandrasekhar Shukla,Rochan Upadhyay,Laxminarayan L. Raja
出处
期刊:Journal of vacuum science and technology
[American Vacuum Society]
日期:2021-06-29
卷期号:39 (4)
被引量:7
摘要
Plasma etching continues to play a central role in microelectronics manufacturing. As the semiconductor industry continues to shrink critical feature sizes and improves device performance, etch challenges continue to increase due to the requirement of processing smaller features along with new device structures. With their high density and high-aspect ratio features, these structures are challenging to manufacture and have required innovation in multiple areas of wafer processing. Innovations in this technology are increasingly reliant on comprehensive physical and chemical models of plasma etch processes. In the present paper, we develop a new mechanism of plasma chemical reactions for a low-pressure CF4/O2 plasma. We validate this mechanism against available experimental data using the self-consistent axisymmetric fluid model of inductively coupled plasma discharge. We show that this mechanism is in reasonable agreement with the results of experiments both quantitively and qualitatively. Using this mechanism, we analyze the influence of oxygen fraction in the feed gas mixture on the kinetics of the ion species and the fluorine and oxygen atom yield.
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