捷克先令
材料科学
锌黄锡矿
硫脲
粒度
晶界
结晶
短路
晶粒生长
太阳能电池
化学工程
能量转换效率
冶金
光电子学
微观结构
电压
化学
电气工程
有机化学
工程类
作者
Shih‐Hsiung Wu,C.-S. Chang,H.T. Chen,Chuan‐Feng Shih,Yuyun Wang,Chou‐Cheng Li,Sheng‐Wen Chan
摘要
Abstract A method for fabricating high‐efficiency Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells is presented, and it is based on a non‐explosive, low‐cost, and simple solution process followed by a two‐step heat treatment. 2‐Methoxyethanol was used as a solvent, and Cu, Zn, Sn, chloride salts, and thiourea were used as solutes. A CZTSSe absorber was prepared by sulfurising and then selenising an as‐coated Cu 2 ZnSnS 4 (CZTS) film. Sulfurisation in a sulfur vapour filled furnace for a long time (2 h) enhanced the crystallisation of the as‐coated CZTS film and improved the stability of the CZTS precursor, and selenisation promoted further grain growth to yield a void‐free CZTSSe film. Segregation of Cu and S at the grain boundaries, the absence of a fine‐grain bottom layer, and the large grain size of the CZTSSe absorber were the main factors that enhanced the grain‐to‐grain transport of carriers and consequently the short‐circuit current ( J sc ) and efficiency. The efficiency of the CZTS solar cell was 5.0%, which increased to 10.1% after selenisation. For the 10.1% CZTSSe solar cell, the external quantum efficiency was approximately 80%, the open‐circuit voltage was 450 mV, the short‐circuit current was 36.5 mA/cm 2 , and the fill factor was 61.9%. Copyright © 2016 John Wiley & Sons, Ltd.
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