Superior Characteristics of RuO2/GaN Schottky-Type UV Photodetector

A RuO2/GaN Schottky diode was designed and fabricated for application as a UV photodetector. The fabricated RuO2/GaN Schottky diode showed a breakdown at over —50 V, plus a leakage current of 9 nA/cm2 at —5 V with a good uniformity that was one order of magnitude lower than that of a Pt/GaN Schottky diode under the same epitaxial conditions. The proposed RuO2/GaN Schottky photodiode also exhibited a UV-visible rejection ratio of 3 × 105 and responsivity of 0.23 A/W at 330 nm.