Design, modeling and fabrication of a CMOS compatible p-n junction avalanche photodiode
作者
Md. Mottaleb Hossain,Javad Ghasemi,Payman Zarkesh-Ha,Majeed M. Hayat
标识
DOI:10.1109/ipcon.2013.6656429
摘要
CMOS compatible avalanche photodiode is designed, modeled and fabricated. Calculated mean gain, avalanche breakdown voltage, excess-noise factor, as well as the measured dark-current and spectral response are reported.