拓扑绝缘体
非线性系统
物理
拓扑(电路)
Berry连接和曲率
曲率
对称(几何)
边界(拓扑)
拓扑序
量子
边值问题
拓扑简并
凝聚态物理
拓扑量子数
输运现象
对称保护拓扑序
轴子
双稳态
经典力学
量子霍尔效应
几何学
量子力学
电磁学
作者
Zhuo, Deyi,Liu, Xiaoda,Le, Huu-Thong,Wang, Annie G.,Tay, Han,Zhang, Bomin,Zhou, Ling-Jie,Yan, Binghai,Liu, Chao-Xing,Chang, Cui-Zu
标识
DOI:10.48550/arxiv.2512.07017
摘要
Nonlinear transport has emerged as a powerful approach to probe the quantum geometry of electronic wavefunctions, such as Berry curvature and quantum metric, in topological materials. While nonlinear responses governed by bulk quantum geometry and band topology are well understood, the role of boundary modes (e.g., edge, surface, and hinge states) in nonlinear transport of topological materials remains largely unexplored. In this work, we demonstrate boundary-bulk interplay in nonlinear transport, including second-harmonic Hall and nonreciprocal longitudinal responses, in molecular beam epitaxy-grown magnetic topological insulator heterostructures. We find that the nonlinear transport is maximized when the sample is tuned slightly away from the well-quantized states, including the quantum anomalous Hall and axion insulator states. The sign and amplitude of the nonlinear transport depend on electrode configuration, magnetic order, and carrier type, establishing boundary mode transport as the dominant contributor. These findings, supported by symmetry analysis and nonlinear Landauer-Büttiker formalism, demonstrate that nonlinear transport in topological materials is governed by the interplay between boundary and bulk states. We further derive a universal relation between different lead voltages from electrode geometry symmetry, which allows us to distinguish nonlinear boundary transport from bulk contributions. Our work highlights the critical role of electrodes in nonlinear transport, which is absent in nonlinear optics, and establishes boundary modes as a key origin of the giant nonlinear response in nearly bulk-insulating topological materials. This insight opens new opportunities for engineering nonlinear transport through boundary-bulk interplay in future device applications of topological materials.
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