Investigation of well thickness reduction effect of GaInNAs/GaAs quantum well lasers

We investigated the advantageous of a thin quantum well (QW) for GaInNAs laser performances. We pointed out that the reduction of the well thickness has almost no disadvantage on the optical gain and the carrier overflow due to a large conduction band offset. A thin QW is advantageous for suppression of the carrier overflow to the higher quantized energy levels which results In good temperature and gain characteristics. A thin GaInNAs QW is a good candidate for an active layer structure of the laser utilized in high performance optical communication systems.