High electron mobility enhancement on (110) surface due to uniaxial strain and its impact on short channel device performance of SOl FinFETs

We have successfully fabricated uniaxially strained SOI FinFETs with high electron mobility and low parasitic resistance. The electron mobility on (110) sidewall surfaces was found to surpass the (100) universal mobility by the subband engineering through uniaxial tensile strain along <110>. Thanks to this high electron mobility enhancement and the relatively low parasitic resistance, high I _on enhancement of +38% and the I _on value of 900 ¿A/¿m in 50 nm gate length n-FinFETs with (110) surfaces were realized.