Gallium nitride (GaN) HEMT's: progress and potential for commercial applications
作者
J. R. Shealy,J. Smart,Matthew Poulton,R.A. Sadler,D.E. Grider,Shawn R. Gibb,Brook Hosse,Bruna Ramos de Sousa,D. Halchin,V. Steel,P. Garber,Patrick Wilkerson,B. Zaroff,J. R. Dick,T. Mercier,J. Bonaker,M. Hamilton,Christopher Greer,M. Isenhour
标识
DOI：10.1109/gaas.2002.1049069
摘要
This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.
PDF的下载单位、IP信息已删除
(2025-6-4)
Kao
Copyright
嘻嘻哈哈
Astraeus
Oracle
认真的不评
CC
thf666
愉快的真
猪猪hero
OK
Nole
英俊的皮带
迷人的天抒
学术文献互助
Criminology34
大力的冬萱
星野
清平道人
含糊的幻波
皖公网安备34019202002308
