材料科学
聚酰亚胺
热稳定性
X射线光电子能谱
扫描电子显微镜
硅
薄膜
化学工程
图层(电子)
氧气
分析化学(期刊)
纳米技术
复合材料
光电子学
有机化学
化学
工程类
作者
Xingfeng Lei,Yao Pan,Mingtao Qiao,Wanlu Sun,Hepeng Zhang,Qiuyu Zhang
标识
DOI:10.1177/0954008314528011
摘要
Silicon (Si)-containing polyimides (PIs) with superior atomic oxygen (AO) resistance are promising materials for space applications. Here, in this study, we present the synthesis and characterization of eight Si-containing PI thin films and evaluate their AO durability. The resulting PI films exhibited high thermal stability and preferable AO resistance but showed slightly reduced mechanical performance relative to pristine PI. The highest optical transparency at 550 nm was observed for PI/octaaminopropylsilsesquioxane, while the lowest value was observed for PI/silica (SiO 2 ) hybrids. X-Ray photoelectron spectroscopic study suggested that the topmost surface of PI was degraded at the early stage and an SiO 2 inert protective layer was finally formed on the surface of hybrid films after AO exposure. It is found that Si-containing units of higher oxidation states and with higher Si/O molar ratio are favorable to improve the AO resistance. Dispersion of Si at molecular level contributes to improving anti-AO property as well as optical transparency of the prepared films. The characterization of scanning electron microscopy indicated a continuous SiO 2 protective layer was crucial to prevent AO from eroding the bulk matrix.
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