A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga2O3 photoconductor with high photo response

A 4×4 beta-phase gallium oxide ( β -Ga 2 O 3 ) deep-ultraviolet (DUV) rectangular 10-fingers interdigital metal-semiconductor-metal (MSM) photodetector array of high photo responsivity is introduced. The Ga 2 O 3 thin film is prepared through the metalorganic chemical vapor deposition technique, then used to construct the photodetector array via photolithography, lift-off, and ion beam sputtering methods. The one photodetector cell shows dark current of 1.94 pA, photo-to-dark current ratio of 6×10 7 , photo responsivity of 634.15 A⋅W −1 , specific detectivity of 5.93×10 11 cm⋅Hz 1/2 ⋅W −1 (Jones), external quantum efficiency of 310000%, and linear dynamic region of 108.94 dB, indicating high performances for DUV photo detection. Furthermore, the 16-cell photodetector array displays uniform performances with decent deviation of 19.6% for photo responsivity.