On-resistance analysis in trench power MOSFETs with fully depletion between trenches

This paper aims to provide a specific on-resistance (R/sub ON/xS) study in trench power MOSFET structures with a distance between trenches (D/sub trench/) in the submicron range. Theoretical and simulation results show the influence of the fully depletion between the two gates on the R/sub ON/xS value. Hence, the different components of R/sub ON/xS are separately analyzed and modelled in order to find their dependency with D/sub trench/.