带隙
响应度
材料科学
紫外线
光电探测器
物理
光电子学
分析化学(期刊)
化学
有机化学
作者
Jianmiao Guo,Minghe Ma,Yuqiang Li,Dan Zhang,Yanghui Liu,Wei Zheng
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2021-06-01
卷期号:42 (6): 895-898
被引量:10
标识
DOI:10.1109/led.2021.3070899
摘要
In this letter, we successfully prepared tunable bandgap ZrGaO films on n-GaN substrates by RF magnetron sputtering. ZrGaO films with different Zr contents were successfully prepared with Zr target sputtered with various RF powers and Ga 2 O 3 target sputtered with an RF power of 100 W. The bandgap of ZrGaO film deposited with a Zr target sputtering power of 70 W was broadened to 5.4 eV, indicating that Zr can be a promising candidate to enlarge the bandgap of Ga 2 O 3 . Based on this ZrGaO film, a deep-ultraviolet photodetector was fabricated, which has an ultrahigh photo-to-dark ratio up to 10 4 and a high responsivity (0.035 A/W at 0 V bias). The proposed idea of preparing bandgap tunable ZrGaO film by alloying ZrO 2 with Ga 2 O 3 is of great significance to the bandgap engineering of Ga 2 O 3 and to its application in ultraviolet detection.
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