光电子学
调制(音乐)
材料科学
发光二极管
宽禁带半导体
物理
声学
作者
Qin Tan,Xin Yang,Xingxia Sun,Chenguang Zhu,Yong Liu,Huawei Liu,Junyu Qu,Chenxi Liu,Xiaoli Zhu,Xiaoxia Wang,Dong Li,Shula Chen,Anlian Pan
摘要
Optoelectronic integrated circuits, with a broad photonic transportation bandwidth, have emerged as a promising solution to fulfill the escalating demands for high-volume information transportation and processing. However, challenges persist in developing optoelectronic integrated circuits based on low-dimensional nanostructures, including limited integration density and high energy consumption. Here, we demonstrate a bidirectional optoelectronic device by integrating a light-emitting/harvesting CsPbBr3 nanoplate with a waveguiding/modulating/detecting CdS nanobelt. By configuring the CsPbBr3 nanoplate in a Schottky-type device structure with a metal electrode, bright electroluminescence was attained at a bias voltage of 18 V. Thanks to the electric field-tuned phonon-coupling effect, the waveguided light in the CdS nanobelt exhibited a high modulation depth of up to 94%, rendering it an excellent building block as optical modulators and optical switches. Moreover, the integrated nanostructure device showcased functionality in the photodetection mode. The proposed device architecture holds promise for broader applications, potentially extending to other perovskite-coupled II–VI semiconductor optoelectronic integrated circuits for expanding integration capacity and enhancing optoelectronic performance.
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