光电二极管
光电子学
光伏系统
光电探测器
材料科学
偏压
量子效率
放大器
物理
电压
电气工程
CMOS芯片
量子力学
工程类
作者
Qingxia Liu,Lingfeng Li,Jiaao Wu,Yang Wang,Yuan Liu,Zhi Jiang,Jianhua Xiao,Deen Gu,Weizhi Li,Huiling Tai,Yadong Jiang
标识
DOI:10.1038/s41467-023-42742-0
摘要
Abstract The limited sensitivity of photovoltaic-type photodiodes makes it indispensable to use pre-amplifier circuits for effectively extracting electrical signals, especially when detecting dim light. Additionally, the photomultiplication photodiodes with light amplification function suffer from potential damages caused by high power consumption under strong light. In this work, by adopting the synergy strategy of thermal-induced interfacial structural traps and blocking layers, we develop a dual-mode visible-near infrared organic photodiode with bias-switchable photomultiplication and photovoltaic operating modes, exhibiting high specific detectivity (~10 12 Jones) and fast response speed (0.05/3.03 ms for photomultiplication-mode; 8.64/11.14 μs for photovoltaic-mode). The device also delivers disparate external quantum efficiency in two optional operating modes, showing potential in simultaneously detecting dim and strong light ranging from ~10 −9 to 10 −1 W cm −2 . The general strategy and working mechanism are validated in different organic layers. This work offers an attractive option to develop bias-switchable multi-mode organic photodetectors for various application scenarios.
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