Improvement of MoS2 film quality using sputtering processes controlling particle- and energy-flux followed by sulfur-vapor annealing

Abstract Molybdenum disulfide (MoS 2 ) deposited by sputtering holds promise for applications in areas such as three-dimensional (3D)-stacked field-effect transistors (FETs) and human-interface devices. The quality of the MoS 2 film is enhanced by maintaining a low particle flux with sufficient energy flux during sputtering. Furthermore, the sulfur defects in the MoS 2 films were suppressed by annealing in a sulfur-vapor atmosphere, leading to an improvement in the film quality. This technology has great potential for the development of high-performance FETs based on MoS 2 channels using sputtering.