卤化物
铁电性
材料科学
光电子学
灵敏度(控制系统)
带隙
蒸发
探测器
等温过程
产品(数学)
极限(数学)
二极管
检出限
宽禁带半导体
半导体
光电探测器
纳米技术
作者
Yi Zhang,Hongxia Li,Cai Ning,Lang Wang,Qing‐Feng Luo,Telun Li,Hao‐Fei Ni,Huili Ma,Zhi‐Xu Zhang,Jinlan Wang,Da‐Wei Fu,Ming‐Gang Ju,Kui Zhao,Yi Zhang
标识
DOI:10.1002/anie.202525694
摘要
Abstract Bi/Sb‐based halide ferroelectrics have become promising lead‐free alternatives due to their excellent stability and environmental friendliness. However, their wide bandgaps and limited charge‐carrier mobility‐lifetime ( µτ ) product impede their optoelectronic performance. Here, we report a new eco‐friendly method for growing lead‐free halide ferroelectric solid‐solution (HDA)Sb 1‐x Bi x I 5 (x = 0–1) (HDA = hexane‐1,6‐diammonium), by isothermal evaporation from a biomass‐derived solvent, γ ‐valerolactone (GVL). The solid‐solution strategy, good material stability,‐ and high‐quality centimeter‐sized single‐crystals not only endow the (HDA)Sb 0.39 Bi 0.61 I 5 with the narrowest bandgap of 1.64 eV among Bi/Sb‐based halide ferroelectrics, but also enhance its µτ product by approximately two orders of magnitude compared with the parent (HDA)SbI 5 . Benefiting from these attributes and the intrinsic ferroelectric spontaneous polarization, the X‐ray detector based on (HDA)Sb 0.39 Bi 0.61 I 5 exhibits excellent self‐powered detection performance with a high sensitivity of 1,040 µC Gy air −1 cm −2 and a low detection limit of 0.25 nGy air s −1 . More excitingly, its detection sensitivity can reach 17,560 µC Gy air −1 cm −2 , which is the highest among reported halide ferroelectrics, and superior to that of most halide detectors. This work opens new avenues for the rational engineering of Bi/Sb‐based halide ferroelectrics for advanced optoelectronic applications.
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