Influence of ion doping temperature on the distribution of dopant

In this paper, we analyze the redistribution of dopant and radiation defects during ion doping of materials at various values of temperature. We obtain that increasing of temperature of ion doping leads to increasing radiation resistance of the considered materials. At the same time depth of p–n-junctions, manufactured in the framework of the technological process, increases in this situation. We also introduce an analytical approach for the prognosis of mass and heat transfer, while taking into account the nonlinearity of these processes and at the same time the simultaneous changing of their parameters in space and time.