Exploring the electronic and superior piezoelectric properties of two-dimensional PH-SiX materials for high-performance silicon-based devices

PH-SiZn exhibits a d 11 value of 63.148 pm V −1 , which is higher than that of 2H-MoS 2 by a factor of 17. The compressive strain leads to an enhancement of piezoelectricity, with PH-SiAl in an improvement of 369.2% in piezoelectricity at 4% strain.