Chirality-induced intrinsic charge rectification in a tellurium-based field-effect transistor

Chiral conductors exhibit spin-related charge rectification but its controllability is largely unexplored. Here, the authors combine chiral charge rectification with a field-effect transistor of tellurium. They demonstrate a gate-variable hundredfold enhancement of the rectification efficiency and enable quantitative comparison with theoretical calculations which considered chiral spin-momentum locking alongside the Zeeman effect. With this comparison across a wide range of temperature, an unexpected deviation from the conventional theory is revealed, which hints at the relevance of chirality-induced spin selectivity at higher temperatures.