Demonstration of Ferroelectric FET Memory with Oxide Semiconductor Channel to Achieve Smallest Cell Area 0.009 μm 2 and High Endurance for Non-Volatile High-Bandwidth Memory Applications

Here we experimentally demonstrate a smallest cell area of 0.009 μm2in ferroelectric (FE) FET memory device with oxide semiconductor (OS) channel (OS-FeFET) and achieve high read current to 40$\mu \mathrm{A}/\mu \mathrm{m}$, program speed below 30 ns, and >1000 s data retention at 85 °C fabricated by BEOL-compatible processes on 300-mm wafer. We show that the asymmetric dipole switching issue inherent to lack of hole carriers in n-type OS can be effectively mitigated by phase engineering in$\text{Hf}_{(1-\mathrm{x})}\text{Zr}_{\mathrm{x}}\mathrm{O}_{2}$(HZO) film to attain highly reproducible switching behaviors with reduced operation voltage. The endurance of OS-FeFET can be significantly improved by interface layer (IL) and HZO film engineering to minimizing the generation and migration of oxygen vacancy, leading to outstanding endurance towards 1012cycles. This work paves way to realize BEOL-compatible memory with high density and low-power consumption.