Conduction Band Edge Charge Densities in HgxCd1−xTe

Abstract On the basis of the charge densities at the conduction band edge Xc the effect of interstitial impurities on the modification of the band structure of the system HgxCd1−xTe is explained. The inversion of the symmetry state at Xc in relation to x bears information on the semimetal‐semiconductor transition.