材料科学
光电子学
异质结
基质(水族馆)
光谱学
宽禁带半导体
接受者
晶体管
门控
分析化学(期刊)
电压
化学
凝聚态物理
物理
生物
海洋学
地质学
量子力学
色谱法
生理学
作者
Shu Yang,Chunhua Zhou,Qimeng Jiang,Jianbiao Lu,Baoling Huang,Kevin J. Chen
摘要
Thermally stimulated current (TSC) spectroscopy and high-voltage back-gating measurement are utilized to study GaN buffer traps specific to AlGaN/GaN lateral heterojunction structures grown on a low-resistivity Si substrate. Three dominating deep-level traps in GaN buffer with activation energies of ΔET1 ∼ 0.54 eV, ΔET2 ∼ 0.65 eV, and ΔET3 ∼ 0.75 eV are extracted from TSC spectroscopy in a vertical GaN-on-Si structure. High back-gate bias applied to the Si substrate could influence the drain current in an AlGaN/GaN-on-Si high-electron-mobility transistor in a way that cannot be explained with a simple field-effect model. By correlating the trap states identified in TSC with the back-gating measurement results, it is proposed that the ionization/deionization of both donor and acceptor traps are responsible for the generation of buffer space charges, which impose additional modulation to the 2DEG channel.
科研通智能强力驱动
Strongly Powered by AbleSci AI