Remarkable thermoelectric property enhancement in Cu2SnS3–CuCo2S4 nanocomposites via 3D modulation doping

Modulation doping due to charge transfer at interfaces with an appropriate band alignment led to a large power factor and a high ZT (∼0.83 at 773 K) in a Cu₂SnS₃-5 mol% CuCo₂S₄ composite with a superior carrier mobility to uniformly doped Cu₂SnS₃.