范德瓦尔斯力
半导体
带隙
电子能带结构
异质结
类型(生物学)
电场
直接和间接带隙
GSM演进的增强数据速率
凝聚态物理
物理
化学
材料科学
量子力学
光电子学
计算机科学
分子
电信
生物
生态学
作者
Yuan Si,Hongyu Wu,Ji‐Chun Lian,Wei‐Qing Huang,Wangyu Hu,Gui‐Fang Huang
摘要
The energetic alignment of band edges at the interface plays a central role in determining the properties and applications of two-dimensional (2D) van der Waals (vdW) heterostructures. Generally, three conventional heterojunction types (type-I, type-II, and type-III) have widely been investigated and used in diverse fields. Unconventional band alignments (type-IV, type-V, and type-VI) are, however, hitherto unreported in the vdW heterostructures. We find that 2D binary semiconductors composed of group IV-V elements manifest a similar electronic structure, offering in principle the possibility of designing heterostructures with novel band alignments due to the hybridization of band-edge states. We first show here that a 2D SiAs/GeP heterostructure exhibits a type-VI band alignment, which is induced by the interlayer pz orbital hybridization, and a transition of band alignment from type-VI to type-V occurs when strain or electric field is applied over a critical value. The unconventional band alignments and their transition natures enable broad application of these vdW heterostructures in special opto-electronic devices and energy conversion.
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