薄膜晶体管
材料科学
无定形固体
栅极电介质
费米能级
光电子学
态密度
密度泛函理论
阈值电压
接受者
纳米片
电介质
晶体管
凝聚态物理
纳米技术
电压
计算化学
电气工程
化学
电子
图层(电子)
结晶学
工程类
物理
量子力学
作者
Wan-Ta Fan,Po‐Tsun Liu,Po-Yi Kuo,Chia-Chun Chang,I-Han Liu,Yue Kuo
出处
期刊:Nanomaterials
[MDPI AG]
日期:2021-11-15
卷期号:11 (11): 3070-3070
被引量:6
摘要
The integration of 4 nm thick amorphous indium tungsten oxide (a-IWO) and a hafnium oxide (HfO2) high-κ gate dielectric has been demonstrated previously as one of promising amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). In this study, the more positive threshold voltage shift (∆VTH) and reduced ION were observed when increasing the oxygen ratio during a-IWO deposition. Through simple material measurements and Technology Computer Aided Design (TCAD) analysis, the distinct correlation between different chemical species and the corresponding bulk and interface density of states (DOS) parameters were systematically deduced, validating the proposed physical mechanisms with a quantum model for a-IWO nanosheet TFT. The effects of oxygen flow on oxygen interstitial (Oi) defects were numerically proved for modulating bulk dopant concentration Nd and interface density of Gaussian acceptor trap NGA at the front channel, significantly dominating the transfer characteristics of a-IWO TFT. Furthermore, based on the studies of density functional theory (DFT) for the correlation between formation energy Ef of Oi defect and Fermi level (EF) position, we propose a numerical methodology for monitoring the possible concentration distribution of Oi as a function of a bias condition for AOS TFTs.
科研通智能强力驱动
Strongly Powered by AbleSci AI