材料科学
压电
外延
硅
基质(水族馆)
制作
微电子机械系统
复合材料
光电子学
薄膜
纳米技术
图层(电子)
地质学
海洋学
病理
医学
替代医学
作者
D. M. Kim,Chang‐Beom Eom,V. Nagarajan,Jun Ouyang,R. Ramesh,V. Vaithyanathan,Darrell G. Schlom
摘要
We report the structural and longitudinal piezoelectric responses (d33) of epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) films on (001) SrTiO3 and Si substrates in the thickness range of 40nm–4μm. With increasing film thickness the tetragonality of PZT was reduced. The increase in d33 value with increasing film thicknesses was attributed to the reduction of substrate constraints and softening of PZT due to reduced tetragonality. The d33 values of PZT films on Si substrates (∼330pm∕V) are higher than those on SrTiO3 substrates (∼200pm∕V). The epitaxial PZT films on silicon will lead to the fabrication of high performance piezoelectric microelectromechanical devices.
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