A new 4-phase charge pump without body effects for low supply voltages

A new four-phase charge pumping circuit for low supply voltages using 0.6 /spl mu/m triple-well CMOS technology to generate high negative boosted voltages is presented. With the new substrate connected technique, the influence of threshold voltage (-0.94 V) is minimized and the body effect is almost eliminated. A five-stage charge pump can efficiently pump lower than -7 V at supply voltage of 1.8 V with 100 /spl mu/A loading current.