期刊:Chemistry Letters [Oxford University Press] 日期:2006-02-11卷期号:35 (3): 302-303被引量:13
标识
DOI:10.1246/cl.2006.302
摘要
Abstract We report fabrication and device characteristics of field-effect transistors (FETs) based on single crystals of one-dimensional (1-D) platinum chain compound, bis(1,2-benzoquinonedioximato)platinum(II), Pt(bqd)2. The device with the channel along Pt chains shows n-type field-effect properties with a mobility of as large as 0.2 cm2/V s under atmospheric conditions.