Stabilization of CdxHg1-xTe heterointerfaces

Interdiffusion between epitaxial layers of (Hg,Cd)Te of unequal composition (in the limit, HgTe and CdTe) gives rise to non-abrupt interfaces in heterostructure devices composed of these materials. In this paper, it is proposed that a strained ZnTe barrier layer, interposed at such a heterointerface, may inhibit interdiffusion. Initial results obtained from a CdTe-ZnTe-HgCdTe test structure grown by MOVPE at 325°C are presented. TEM observations and electron microprobe measurements indicate that distinct interfaces are maintained.