材料科学
光致发光
纳米晶
钙钛矿(结构)
光电子学
量子效率
量子产额
发光二极管
发光
成核
二极管
量子点
降水
产量(工程)
纳米技术
作者
Guohao Bu,S K Wang,C R Yang,Wenyuan Zhou,Chao Tian,Naiwei Liu,Jun Pan,Chaoyu Xiang
摘要
ABSTRACT The synthesis of perovskite nanocrystals for light‐emitting diodes typically employs poorly controlled ion‐mediated precipitation processes, suffering from low photoluminescence quantum yield (PLQY), inhomogeneous morphology, and poor stability. Herein, by adjusting the nucleation method with a new type of precursor, namely “DMAPbI 3 ”, high‐quality and low‐defect‐density perovskite CsPbI 3 nanocrystals were successfully synthesized, with PLQY of 93% emitting at 659 nm. Particularly, the CsPbI 3 nanocrystals exhibit enhanced environmental stability, maintaining ∼70% of their initial photoluminescence intensity after 6 h of UV irradiation exposure or 100°C aging. Utilized as the luminescent layer, the fabricated perovskite LED (PeLED) device shows a peak EQE of 27.5%, representing an almost two‐fold enhancement compared to 14.7% for the control PeLED device. This simple and efficient approach is well‐suited for large‐scale production and practical applications.
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