High-Performance Van Der Waals Multiferroic Tunnel Junctions Based on Bilayer GeC with Asymmetric Ferromagnetic Electrodes

Van der Waals (vdW) multiferroic tunnel junctions (MFTJs) based on two-dimensional layered materials have emerged as a promising platform for next-generation non-volatile memory devices. In this work, we propose and theoretically investigate a high-performance all-vdW MFTJ consisting of a sliding ferroelectric bilayer GeC barrier sandwiched between asymmetric ferromagnetic metallic electrodes, Fe3GaTe2 and Fe3GeTe2. Using first-principles calculations combined with the non-equilibrium Green’s function (NEGF) method, we demonstrate that the bilayer GeC possesses robust vertical ferroelectricity switchable by interlayer sliding. By incorporating monolayer graphene as protective layers to mitigate metal-induced gap states, the device preserves the intrinsic ferroelectric polarization of the barrier. Our results reveal that four distinct non-volatile resistance states can be realized by independently manipulating the ferroelectric polarization and magnetization configurations. Remarkably, the device exhibits a giant Tunneling Magnetoresistance (TMR) ratio of up to 750.95% and a large Tunneling Electroresistance (TER) ratio of 322.97%. Furthermore, we observe perfect spin-filtering efficiency and a significant negative differential resistance (NDR) effect under finite bias voltage. These findings suggest that the Fe3GaTe2/graphene/bilayer-GeC/graphene/Fe3GeTe2 heterostructure is a compelling candidate for multifunctional spintronic applications in the post-Moore era.