High k Gate Dielectric and Materials Si Nanotransistor

After scaling down to nanosized range,the usual used SiO2 for the gate dielectric of MOS transistor can not be suitable for the further scaling down of nanotransistors,the high k gate dielectric should be used.A series of problems,such as why the high k gate dielectric must be used in the nanotransistors,the physical and electric properties of the materials,compatibility between Si and such kind of materials,and the defects of the materials on the properties and effects on the devices are described.In addition,the future development of the high k dielectric is also discussed.