异质结
拓扑绝缘体
材料科学
阳极
光电子学
绝缘体(电)
超短脉冲
电化学
纳米技术
拓扑(电路)
电气工程
凝聚态物理
化学
物理
电极
光学
激光器
物理化学
工程类
作者
Minggang Xie,Chunguang Li,Siqi Zhang,Zhe Zhang,Yuxin Li,Xiaobo Chen,Zhan Shi,Shouhua Feng
出处
期刊:Small
[Wiley]
日期:2023-04-20
卷期号:19 (33): e2301436-e2301436
被引量:30
标识
DOI:10.1002/smll.202301436
摘要
Abstract The development of fast charging materials offers a viable solution for large‐scale and sustainable energy storage needs. However, it remains a critical challenge to improve the electrical and ionic conductivity for better performance. Topological insulator (TI), a topological quantum material that has attracted worldwide attention, hosts unusual metallic surface states and consequent high carrier mobility. Nevertheless, its potential in promising high‐rate charging capability has not been fully realized and explored. Herein, a novel Bi 2 Se 3 ‐ZnSe heterostructure as excellent fast charging material for Na + storage is reported. Ultrathin Bi 2 Se 3 nanoplates with rich TI metallic surfaces are introduced as an electronic platform inside the material, which greatly reduces the charge transfer resistance and improves the overall electrical conductivity. Meanwhile, the abundant crystalline interfaces between these two selenides promote Na + migration and provide additional active sites as well. As expected, the composite delivers the excellent high‐rate performance of 360.5 mAh g −1 at 20 A g −1 and maintains its electrochemical stability of 318.4 mAh g −1 after 3000 long cycles, which is the record high for all reported selenide‐based anodes. This work is anticipated to provide alternative strategies for further exploration of topological insulators and advanced heterostructures.
科研通智能强力驱动
Strongly Powered by AbleSci AI