Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study

High-temperature operando neutron reflectometry of Ni/Cu-mediated graphene growth on 3C–SiC shows (1) formation of a metal alloy, (2) nickel silicidation releasing atomic carbon, and (3) formation of graphene at 1100 °C in liquid phase.