Acid-base engineered strategy of HKUST-1 dopants for high electrical conductivity of single-walled carbon nanotubes films

The improvement of electrical conductivity of carbon nanotubes is still a challenge via tuning the carrier concentration and mobility with organic or inorganic dopants due to low doping efficiency. In this paper, single-walled carbon nanotubes (SWCNTs) have been doped with Cu3(BTC)2·(H2O)3 (HKUST-1) as metal organic frameworks via simple mixing and vacuum filtration method. With fine acid or base post-treatment, the crystal structure of HKUST-1 was broken into fragments with more active sites and provided plenty of carriers injecting into SWCNTs. The electrical conductivity of SWCNTs/HKUST-1 films was increased by almost 2.5 times compared to pristine SWCNTs at room temperature. The defect tuning of dopants on SWCNTs surface is an effective carrier injection strategy, which provides a way to improve the electrical conductivity of SWCNTs.