Impact of temperature variation on linearity parameters of nanotube surrounding gate (NT‐SG) MOSFETs

Abstract The work investigates the effect of temperature variation on the linearity performance of Nanotube Junctionless Surrounding Gate (NT‐SG) MOSFET. In this study, the linearity parameters of NT‐SG MOSFET is investigated by changing the temperature range from 300 to 500 K using the Silvaco 3D Simulator. For the specified temperature range, characteristics including high‐order trans‐conductance (gm 2 and gm 3 ), IIP3, VIP3, and VIP2 have been assessed. All of these metrics exhibit great linearity and little distortion at the NT‐SG MOSFET's zero crossover point for V ds = 0.01 V. The VIP2 and VIP3 are found to be increased when the temperature range increases from 300 to 500 K and thus the device is found to be more suitable for high‐frequency applications. In addition to this, the NT‐SG MOSFET manifests enhanced analog performance and is also more immune toward SCEs.