Red, green and blue InGaN micro-LEDs for display application: temperature and current density effects

发光二极管 材料科学 RGB颜色模型 光学 光电子学 色域 电流密度 电致发光 电流(流体) LED显示屏 色温 计算机科学 纳米技术 电气工程 物理 量子力学 图层(电子) 工程类 操作系统
作者
Zhou Wang,Shijie Zhu,Xinyi Shan,Zexing Yuan,Zeyuan Qian,Xinyi Lu,Yi Fu,Kui Tu,Hui Guan,Xugao Cui,Pengfei Tian
出处
期刊:Optics Express [Optica Publishing Group]
卷期号:30 (20): 36403-36403 被引量:19
标识
DOI:10.1364/oe.469132
摘要

Micro-LED has attracted tremendous attention as next-generation display, but InGaN red-green-blue (RGB) based high-efficiency micro-LEDs, especially red InGaN micro-LED, face significant challenges and the optoelectronic performance is inevitably affected by environmental factors such as varying temperature and operating current density. Here, we demonstrated the RGB InGaN micro-LEDs, and investigated the effects of temperature and current density for the InGaN RGB micro-LED display. We found that temperature increase can lead to the changes of electrical characteristics, the shifts in electroluminescence spectra, the increase of full width at half maximum and the decreases of light output power, external quantum efficiency, power efficiency, and ambient contrast ratios, while current density increase can also give rise to different changing trends of the varieties of parameters mentioned just above for the RGB micro-LED display, creating great challenges for its application in practical scenarios. Despite of the varying electrical and optical charateristics, relatively high and stable colour gamut of the RGB display can be maintained under changing temperature and current density. Based on the results above, mechanisms on the temperature and current density effects were analyzed in detail, which would be helpful to predict the parameters change of micro-LED display caused by temperature and current density, and provided guidance for improving the performance of InGaN micro-LED display in the future.
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