FIB fabrication and electron emission characteristics of overhanging tungsten and platinum nanostructures

The recent advancement in nanofabrication technology has enabled realization of vacuum electron devices with nanogap spacing. These devices have advantages over semiconductor counterparts due to possible operation under hard conditions and some unique functionalities. The challenging task, however, lies with the full understanding of their current–voltage (I–V) characteristics, resulting from various electron emission mechanisms. The reliable extraction of device parameters is, therefore, vital for its potential applications. An attempt has, therefore, been made here to fabricate two three-dimensional overhanging electrodes of tungsten and platinum with a nanoscale gap of 70–100 nm on glass substrates using chemical vapor deposition and focused ion beam milling. Their (I–V) characteristics measured in situ at ∼10−6 mbar are shown to follow the Child–Langmuir law and Fowler–Nordheim field emission at low and high-bias conditions, respectively. The extraction of parameters with a simple procedure suggested earlier yields an effective emission area of ∼3510 Å2, work function of ∼2.5 eV, and field enhancement factor (β) of ∼ 1.8 for tungsten; the values for platinum are 12.5 Å2, 3.0 eV, and 5.0, respectively. The higher β in the case of platinum can be attributed to the formation of a comparatively rough emitter surface with some fine protrusions. The nanostructure gives a current spike at high voltages, which marks its transition to an explosive emission state, breakdown, and dispersion of spherical metal particles over the substrate.