Semiconducting Nanomaterials for Intrinsically Stretchable Field‐Effect Transistors

Abstract Developing intrinsically stretchable field‐effect transistors (FETs) is critical for enabling next‐generation flexible, wearable, and bio‐integrated electronic systems. Unlike conventional stretchable devices that rely primarily on geometric engineering of rigid materials, intrinsically stretchable FETs involve materials that inherently withstand large mechanical deformation while preserving their electronic performance. Although significant progress is achieved in the field of stretchable devices, further innovation in semiconductor materials and compatible process technologies remains essential for advancing the field. This review summarizes recent progress and challenges in intrinsically stretchable semiconducting nanomaterials. Various fabricating processes for stretchable devices are presented, together with recent applications of intrinsically stretchable FETs in sensory technologies, stretchable displays, digital computing, and biomimetic systems. Finally, the remaining challenges and perspectives are summarized for future research directions to realize highly scalable, durable, and high‐performance intrinsically stretchable FETs for next‐generation electronic platforms.