Multispectral Integrated Black Arsenene Phototransistors for High-Resolution Imaging and Enhanced Secure Communication

The demand for broadband, room-temperature infrared, and terahertz (THz) detectors is rapidly increasing owing to crucial applications in telecommunications, security screening, nondestructive testing, and medical diagnostics. Current photodetectors face significant challenges, including high intrinsic dark currents and the necessity for cryogenic cooling, which limit their effectiveness in detecting low-energy photons. Here, we introduce a high-performance ultrabroadband photodetector operating at room temperature based on two-dimensional black arsenene (b-As) nanosheets. This device demonstrates responsivity across visible, near-infrared, and THz spectral ranges, with responsivities reaching 91.6 A/W at 520 nm, 6.3 A/W at 1550 nm, and 7.8 V/W at 0.27 THz. The exceptional THz responsivity is attributed to the use of plasma-wave rectification in antenna-integrated field-effect transistors with asymmetric antennas, enhancing light-matter interaction and facilitating nonlinear rectification within the two-dimensional electron gas of the transistor channel, achieving a voltage-dependent bipolar response. These advanced b-As-based photodetectors also enable secure THz communication through complex logic operations, achieving robust data encryption and high-performance signal processing.