材料科学
光电探测器
光电子学
响应度
极化(电化学)
比探测率
光学
物理
物理化学
化学
作者
Le Chen,Ze Long,Jishan Liu,Lu Liu,Ziyang Han,Kexiong Zhang,Hongwei Liang,Hong Yin
标识
DOI:10.1002/adma.202503846
摘要
) of 24. The h-BN based detector achieves a high polarization ratio of 6.2 for 188 nm VUV polarized light, reaching the short-wavelength limit of the reported polarization-sensitive photodetectors. This work presents an effective strategy for designing polarized VUV photodetector from h-BN, and paves the road towards the novel integrated optoelectronics, photonics and electronics based on traditional 2D materials.
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