Electrothermal Comprehensive Optimization Design Considerations of GaN Power Module

This paper provides a comprehensive analysis of the influences of parasitic inductance, parasitic capacitance, and thermal resistance on GaN power module. Large parasitic inductance will result in large turn-off voltage overshoot, more severe electromagnetic compatibility problem, large turn-off loss but smaller turn-on loss and large parasitic capacitance will result in great current bump and large switching loss. Large thermal resistance limits the power level of the power module, reduces the power density of the power electronic converter, and carries the risk of thermal breakdown. Zero-voltage turn-on can be used to eliminate turn-on losses, which is the control method used by most power electronic converters today, so we need to minimize parasitic parameters and thermal resistance as much as possible. In this paper, a design method is proposed from the perspective of electrothermal comprehensive optimization, which reduces the thermal resistance and parasitic capacitance of the GaN power module while ensuring that the parasitic inductance remains unchanged, and better exerts the excellent performance of GaN HEMTs.